• About
  • Policies
  • What is open access
  • Library
  • Contact
Advanced search
      View Item 
      •   BUIR Home
      • Scholarly Publications
      • Faculty of Science
      • Department of Physics
      • View Item
      •   BUIR Home
      • Scholarly Publications
      • Faculty of Science
      • Department of Physics
      • View Item
      JavaScript is disabled for your browser. Some features of this site may not work without it.

      Dependence of the photoluminescence of Tl2InGaS4 layered crystal on temperature and excitation intensity

      Thumbnail
      View / Download
      237.8 Kb
      Author(s)
      Gasanly, N. M.
      Serpengüzel, A.
      Gürlü, O.
      Aydınlı, A.
      Yılmaz, I.
      Date
      1998
      Source Title
      Solid State Communications
      Print ISSN
      0038-1098
      Publisher
      Pergamon Press
      Volume
      108
      Issue
      8
      Pages
      525 - 530
      Language
      English
      Type
      Article
      Item Usage Stats
      192
      views
      201
      downloads
      Abstract
      The emission band spectra of Tl2InGaS4 layered crystals were investigated in the 10-120 K temperature range and in the 540-860 nm wavelength range using photoluminescence (PL). The peak energy position of the emission band is located at 1.754 eV (707 nm) at 10 K. The emission band has a half-width of 0.28 eV and an asymmetric Gaussian lineshape. The increase of the half-width of the emission band, the blue shift of the emission band peak energy and the quenching of the PL with increasing temperature is explained using the configuration coordinate model. The blue shift of the emission band peak energy and the sublinear increase of the emission band intensity with increasing excitation intensity is explained using the inhomogenously spaced donor-acceptor pair recombination model. © 1998 Elsevier Science Ltd. All rights reserved.
      Keywords
      A. semiconductors
      D. optical properties
      E. luminescence
      Emission spectroscopy
      Optical properties
      Photoluminescence
      Quenching
      Single crystals
      Thermal effects
      Emission band intensity
      Excitation intensity
      Thallium compounds
      Permalink
      http://hdl.handle.net/11693/25393
      Published Version (Please cite this version)
      https://doi.org/10.1016/S0038-1098(98)00396-2
      Collections
      • Department of Physics 2550
      Show full item record

      Browse

      All of BUIRCommunities & CollectionsTitlesAuthorsAdvisorsBy Issue DateKeywordsTypeDepartmentsCoursesThis CollectionTitlesAuthorsAdvisorsBy Issue DateKeywordsTypeDepartmentsCourses

      My Account

      Login

      Statistics

      View Usage StatisticsView Google Analytics Statistics

      Bilkent University

      If you have trouble accessing this page and need to request an alternate format, contact the site administrator. Phone: (312) 290 2976
      © Bilkent University - Library IT

      Contact Us | Send Feedback | Off-Campus Access | Admin | Privacy