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      High bandwidth-efficiency resonant cavity enhanced Schottky photodiodes for 800-850 nm wavelength operation

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      Author(s)
      Ünlü, M. S.
      Gökkavas, M.
      Onat, B. M.
      Ata, E.
      Özbay, Ekmel
      Mirin, R. P.
      Knopp, K. J.
      Bertness, K. A.
      Christensen, D. H.
      Date
      1998-05-25
      Source Title
      Applied Physics Letters
      Print ISSN
      0003-6951
      Publisher
      A I P Publishing LLC
      Volume
      72
      Issue
      21
      Pages
      2727 - 2729
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      High-speed resonant cavity enhanced Schottky photodiodes operating in 800-850 nm wavelength region are demonstrated. The devices are fabricated in the AlGaAs/GaAs material system. The Schottky contact is a semitransparent Au film which also serves as the top reflector of the Fabry-Perot cavity. The detectors exhibit a peak quantum efficiency of η=0.5 at λ=827nm wavelength and a 3 dB bandwidth of more than 50 GHz resulting in a bandwidth-efficiency product of more than 25 GHz.
      Permalink
      http://hdl.handle.net/11693/25361
      Published Version (Please cite this version)
      http://dx.doi.org/10.1063/1.121073
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      • Department of Electrical and Electronics Engineering 4012
      • Department of Physics 2551
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