Photoluminescence from a VCSEL structure a-SiNx:H microcavity
Date
1999Source Title
Conference on Lasers and Electro-Optics
Publisher
IEEE
Pages
527 - 528
Language
English
Type
ArticleItem Usage Stats
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Abstract
Microcavity effects on the photoluminescence (PL) of porous Si has already been reported. Recently, we have observed visible and near infrared (IR) PL from hydrogenated amorphous Si nitride (a-SiNx:H) grown by low temperature PECVD. We have also reported the enhancement and inhibition of PL in an a-SiNx:H microcavity formed with metallic mirrors. The a-SiNx:H used in the microcavity was grown both with and without ammonia (NH/sub 3/). For the Si rich a-SiNx:H grown without NH/sub 3/, the PL is in the red-near IR. For the N rich a-SiNx:H grown with NH/sub 3/, the PL is in the blue-green. In this paper, we report on the bright and spectrally pure PL of a-SiNx:H in a VCSEL structure microcavity.
Keywords
Amorphous materialsMirrors
Photoluminescence
Semiconductor lasers
Distributed bragg reflectors
Vertical cavity surface emitting lasers (VCSEL)
Optical materials