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      Photoluminescence from a VCSEL structure a-SiNx:H microcavity

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      Author(s)
      Serpengüzel, A.
      Darici, Y.
      Date
      1999
      Source Title
      Conference on Lasers and Electro-Optics
      Publisher
      IEEE
      Pages
      527 - 528
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      Microcavity effects on the photoluminescence (PL) of porous Si has already been reported. Recently, we have observed visible and near infrared (IR) PL from hydrogenated amorphous Si nitride (a-SiNx:H) grown by low temperature PECVD. We have also reported the enhancement and inhibition of PL in an a-SiNx:H microcavity formed with metallic mirrors. The a-SiNx:H used in the microcavity was grown both with and without ammonia (NH/sub 3/). For the Si rich a-SiNx:H grown without NH/sub 3/, the PL is in the red-near IR. For the N rich a-SiNx:H grown with NH/sub 3/, the PL is in the blue-green. In this paper, we report on the bright and spectrally pure PL of a-SiNx:H in a VCSEL structure microcavity.
      Keywords
      Amorphous materials
      Mirrors
      Photoluminescence
      Semiconductor lasers
      Distributed bragg reflectors
      Vertical cavity surface emitting lasers (VCSEL)
      Optical materials
      Permalink
      http://hdl.handle.net/11693/25300
      Published Version (Please cite this version)
      http://doi.org/10.1109/CLEO.1999.834546
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      • Department of Physics 2550
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