Exchange-correlation effects in the impurity-limited mobility of GaAs quantum wires
Author(s)
Date
1999Source Title
Turkish Journal of Physics
Print ISSN
1300-0101
Publisher
Sci Tech Res Counc Turkey, Ankara, Turkey
Volume
23
Issue
4
Pages
559 - 564
Language
English
Type
ArticleItem Usage Stats
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Abstract
We study the many-body effects described by the local-field corrections on the mobility of quasi-one dimensional electron systems. The low temperature mobility due to remote-impurity doping and interface-roughness scattering is calculated within the relaxation time approximation. We find that correlation effects significantly reduce the mobility at low density.
Keywords
Approximation theoryCarrier mobility
Electron scattering
Semiconducting gallium arsenide
Semiconductor doping
Surface roughness
Remote-impurity doping
Semiconductor quantum wires