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dc.contributor.authorSüzer, Ş.en_US
dc.contributor.authorDag, Ö.en_US
dc.date.accessioned2016-02-08T10:39:10Z
dc.date.available2016-02-08T10:39:10Z
dc.date.issued2000en_US
dc.identifier.issn0008-4042
dc.identifier.urihttp://hdl.handle.net/11693/25098
dc.description.abstractX-ray photoelectron spectroscopy (XPS) is used to determine the oxidation state of gold deposited from an aqueous solution of AuCl4- on to various oxidized surfaces of silicon. Although the observed Au4f signal decreased with the thickness of the oxide layer, the oxidation state of Au was determined as 0 for all the samples analyzed. From the angular dependence of the Si2p and Au4f signals it was determined that Au is deposited on top of the oxidized surfaces of metallic silicon. It is postulated that from an aqueous solution of AuCl4-, gold would deposit in its zerovalent form on to any surface due to its large and positive electrochemical reduction potential (ε° (red) (Au3+/Au) = +1.50 V) and the substrate plays a role only in providing active deposition sites. To further support the proposal, it is shown that the same process takes place even in inert and hydrophobic polypropylene substrates. Similarly, it is also shown that more gold deposits if the surface of the polypropylene is made less hydrophobic (but probably more active) via the industrially used corona discharge treatment.en_US
dc.language.isoEnglishen_US
dc.source.titleCanadian Journal of Chemistryen_US
dc.relation.isversionofhttps://doi.org/10.1139/v00-039en_US
dc.subjectElectroless depositionen_US
dc.subjectGolden_US
dc.subjectOxidized silicon surfaceen_US
dc.subjectXPSen_US
dc.subjectElectrochemistryen_US
dc.subjectHydrophobicityen_US
dc.subjectOxidation reduction reactionen_US
dc.subjectX ray spectrometryen_US
dc.titleReductive deposition of Au3+(aq) on oxidized silicon surfacesen_US
dc.typeArticleen_US
dc.departmentDepartment of Chemistry
dc.citation.spage516en_US
dc.citation.epage519en_US
dc.citation.volumeNumber78en_US
dc.citation.issueNumber4en_US
dc.identifier.doi10.1139/v00-039en_US
dc.publisherN R C Research Pressen_US


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