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dc.contributor.authorGasanly, N. M.en_US
dc.contributor.authorSerpengüzel, A.en_US
dc.contributor.authorAydınlı, A.en_US
dc.contributor.authorBaten, S. M. A.en_US
dc.date.accessioned2016-02-08T10:38:52Z
dc.date.available2016-02-08T10:38:52Z
dc.date.issued2000en_US
dc.identifier.issn0022-2313
dc.identifier.urihttp://hdl.handle.net/11693/25084
dc.description.abstractThe photoluminescence (PL) spectra of TlGaSe2 layered single crystals were investigated in the 8.5-35 K temperature. 0.2-15.2 W cm-2 excitation laser intensity, and in the 600-700 nm wavelength range. The PL spectrum has a slightly asymmetric Gaussian lineshape with a peak position located at 1.937 eV (640 nm) at 8.5 K. The PL is quenched with increasing temperature. The blue shift of the PL peak and the sublinear increase of the PL intensity with increasing laser intensity is explained using the inhomogenously spaced donor-acceptor pair recombination model. Analysis of the data indicates that the PL band is due to donor-acceptor recombination. A shallow acceptor level and a moderately deep donor level are, respectively, introduced at 0.012 eV above the top of the valence band and at 0.317 eV below the bottom of the conduction band. An energy-level diagram for radiative donor-acceptor pair recombination in TlGaSe2 layered single crystals is proposed.en_US
dc.language.isoEnglishen_US
dc.source.titleJournal of Luminescenceen_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/S0022-2313(99)00174-Xen_US
dc.subjectBand structureen_US
dc.subjectCrystal impuritiesen_US
dc.subjectPhotoluminescenceen_US
dc.subjectQuenchingen_US
dc.subjectSemiconductor materialsen_US
dc.subjectSingle crystalsen_US
dc.subjectThallium compoundsen_US
dc.subjectSpaced donor-acceptor pair recombinationen_US
dc.subjectOptical materialsen_US
dc.titleLow-temperature visible photoluminescence spectra of TlGaSe2 layered crystalen_US
dc.typeArticleen_US
dc.departmentDepartment of Physicsen_US
dc.citation.spage39en_US
dc.citation.epage43en_US
dc.citation.volumeNumber86en_US
dc.citation.issueNumber1en_US
dc.identifier.doi10.1016/S0022-2313(99)00174-Xen_US
dc.publisherElsevier Science Publishers B.V., Amsterdam, Netherlandsen_US
dc.identifier.eissn1872-7883


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