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dc.contributor.authorGasanly, N. M.en_US
dc.contributor.authorAydınlı, A.en_US
dc.contributor.authorÖzkan, H.en_US
dc.contributor.authorKocabaş, C.en_US
dc.date.accessioned2016-02-08T10:37:29Z
dc.date.available2016-02-08T10:37:29Z
dc.date.issued2000en_US
dc.identifier.issn0038-1098
dc.identifier.urihttp://hdl.handle.net/11693/25000
dc.description.abstractThe temperature dependence (15-293 K) of the six Raman-active mode frequencies and linewidths in gallium sulfide has been measured in the frequency range from 15 to 380 cm-1. We observed softening and broadening of the optical phonon lines with increasing temperature. Comparison between the experimental data and theories of the shift and broadening of the interlayer and intralayer phonon lines during the heating of the crystal showed that the experimental dependencies can be explained by the contributions from thermal expansion and lattice anharmonicity. The pure-temperature contribution (phonon-phonon coupling) is due to three- and four-phonon processes.en_US
dc.language.isoEnglishen_US
dc.source.titleSolid State Communicationsen_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/S0038-1098(00)00292-1en_US
dc.subjectCrystal latticesen_US
dc.subjectOptical propertiesen_US
dc.subjectPhononsen_US
dc.subjectRaman scatteringen_US
dc.subjectThermal effectsen_US
dc.subjectThermal expansionen_US
dc.subjectGallium sulfideen_US
dc.subjectSemiconducting gallium compoundsen_US
dc.titleTemperature dependence of the first-order Raman scattering in GaS layered crystalsen_US
dc.typeArticleen_US
dc.departmentDepartment of Physicsen_US
dc.citation.spage147en_US
dc.citation.epage151en_US
dc.citation.volumeNumber116en_US
dc.citation.issueNumber3en_US
dc.identifier.doi10.1016/S0038-1098(00)00292-1en_US
dc.publisherPergamon Pressen_US
dc.identifier.eissn1879-2766


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