High-speed transparent indium-tin-oxide based resonant cavity Schottky photodiode with Si3N4/SiO2 top Bragg mirror
Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest
IEEE, Piscataway, NJ, United States
468 - 469
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Please cite this item using this persistent URLhttp://hdl.handle.net/11693/24968
Better performances should be possible for resonant cavity enhanced Schottky photodiodes if one can get rid of the optical losses and scattering caused by the Schottky metal, Au, which also serves as the top mirror of the resonant cavity. The transparent, low resistivity material indium-tin-oxide is a potential alternative to thin semi-transparent Au as a Schottky-barrier contact material. This paper reports work on high-performance indium-tin-oxide-based resonant cavity enhanced Schottky photodiodes.
- Work in Progress 1225