Highly doped silicon micromachined photonic crystals
Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest
IEEE, Piscataway, NJ, United States
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Please cite this item using this persistent URLhttp://hdl.handle.net/11693/24960
New layer-by-layer photonic crystals were fabricated using standard semiconductor micromachining techniques. Because resistivity of a silicon wafer decreases with the doping concentration, the authors predicted that due to the low resistivity of layers, this structure will show metallic photonic crystal properties, exhibiting a metallicity gap with an upper band edge around 100 GHz, with the new dimensions.
- Research Paper 7144