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dc.contributor.authorNecmi, B.en_US
dc.contributor.authorKimukin, I.en_US
dc.contributor.authorOzbay, E.en_US
dc.contributor.authorTuttle, G.en_US
dc.date.accessioned2016-02-08T10:36:42Z
dc.date.available2016-02-08T10:36:42Z
dc.date.issued2000en_US
dc.identifier.isbn1-55752-634-6
dc.identifier.urihttp://hdl.handle.net/11693/24952
dc.description.abstractGaAs based photodetectors operating at 1.3 μm that depend on internal photoemission as the absorption mechanism were fabricated. Quantum efficiency (QE) was increased using resonant cavity enhancement (RCE) effect.en_US
dc.language.isoEnglishen_US
dc.source.titlePacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digesten_US
dc.relation.isversionofhttps://doi.org/10.1109/CLEO.2000.907129en_US
dc.subjectCavity resonatorsen_US
dc.subjectElectric conductorsen_US
dc.subjectLight absorptionen_US
dc.subjectMirrorsen_US
dc.subjectOhmic contactsen_US
dc.subjectPhotoemissionen_US
dc.subjectQuantum efficiencyen_US
dc.subjectSchottky barrier diodesen_US
dc.subjectSemiconducting gallium arsenideen_US
dc.subjectSemiconductor device manufactureen_US
dc.subjectSilicon nitrideen_US
dc.subjectFabry-Perot cavityen_US
dc.subjectFowler relationen_US
dc.subjectMonolithic microfabrication processen_US
dc.subjectResonant cavity enhancementen_US
dc.subjectSchottky barrier internal photoemission photodetectoren_US
dc.subjectPhotodetectorsen_US
dc.title1.3 μm GaAs based resonant cavity enhanced Schottky barrier internal photoemission photodetectoren_US
dc.typeArticleen_US
dc.departmentDepartment of Physicsen_US
dc.citation.spage368en_US
dc.citation.epage369en_US
dc.identifier.doi10.1109/CLEO.2000.907129en_US
dc.publisherIEEE, Piscataway, NJ, United Statesen_US


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