1.3 μm GaAs based resonant cavity enhanced Schottky barrier internal photoemission photodetector
Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest
IEEE, Piscataway, NJ, United States
368 - 369
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Please cite this item using this persistent URLhttp://hdl.handle.net/11693/24952
GaAs based photodetectors operating at 1.3 μm that depend on internal photoemission as the absorption mechanism were fabricated. Quantum efficiency (QE) was increased using resonant cavity enhancement (RCE) effect.