1.3 μm GaAs based resonant cavity enhanced Schottky barrier internal photoemission photodetector
Date
2000Source Title
Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest
Publisher
IEEE, Piscataway, NJ, United States
Pages
368 - 369
Language
English
Type
ArticleItem Usage Stats
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Abstract
GaAs based photodetectors operating at 1.3 μm that depend on internal photoemission as the absorption mechanism were fabricated. Quantum efficiency (QE) was increased using resonant cavity enhancement (RCE) effect.
Keywords
Cavity resonatorsElectric conductors
Light absorption
Mirrors
Ohmic contacts
Photoemission
Quantum efficiency
Schottky barrier diodes
Semiconducting gallium arsenide
Semiconductor device manufacture
Silicon nitride
Fabry-Perot cavity
Fowler relation
Monolithic microfabrication process
Resonant cavity enhancement
Schottky barrier internal photoemission photodetector
Photodetectors