Direct magnetic imaging of ferromagnetic domain structures by room temperature scanning hall probe microscopy using a bismuth micro-Hall probe
Bending, S. J.
Japanese Journal of Applied Physics, Part 2: Letters
Japan Society of Applied Physics
L524 - L527
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Please cite this item using this persistent URLhttp://hdl.handle.net/11693/24862
A bismuth micro-Hall probe sensor with an integrated scanning tunnelling microscope tip was incorporated into a room temperature scanning Hall probe microscope system and successfully used for the direct magnetic imaging of microscopic domains of low coercivity perpendicular garnet thin films and demagnetized strontium ferrite permanent magnets. At a driving current of 800 μA, the Hall coefficient, magnetic field sensitivity and spatial resolution of the Bi probe were 3.3 × 10-4 Ω/G, 0.38 G/√Hz and ∼ 2.8 μm, respectively. The room temperature magnetic field sensitivity of the Bi probe was comparable to that of a semiconducting 1.2μm GaAs/AlGaAs heterostructure micro-Hall probe, which exhibited a value of 0.41 G/√Hz at a maximum driving current of 2μA.
Scanning hall probe microscopy
Magnetic field effects
Scanning tunneling microscopy
Semiconducting aluminum compounds
Semiconducting gallium arsenide
Scanning hall probe microsscope system
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