• About
  • Policies
  • What is open access
  • Library
  • Contact
Advanced search
      View Item 
      •   BUIR Home
      • Scholarly Publications
      • Faculty of Science
      • Department of Physics
      • View Item
      •   BUIR Home
      • Scholarly Publications
      • Faculty of Science
      • Department of Physics
      • View Item
      JavaScript is disabled for your browser. Some features of this site may not work without it.

      Ab initio temperature dependent studies of the homoepitaxial growth on Si(0 0 1) surface

      Thumbnail
      View / Download
      164.1 Kb
      Author(s)
      Dağ, S.
      Çıracı, Salim
      Kılıç, Ç.
      Fong, C. Y.
      Date
      2001
      Source Title
      Surface Science
      Print ISSN
      0039-6028
      Volume
      479
      Issue
      1-3
      Pages
      109 - 120
      Language
      English
      Type
      Article
      Item Usage Stats
      235
      views
      187
      downloads
      Abstract
      We performed ab initio zero temperature and finite temperature molecular dynamics calculations to investigate the homoepitaxial growth on the Si(0 0 1) surface. How do the deposited atoms (adatoms) form addimers and how do the addimers reach their favorable positions at the nucleation site of the growth process are presented. Once two epitaxial addimers, one over the dimer row and oriented perpendicular to the surface dimer bonds and the other over the adjacent trough, are aligned at high temperature, the nucleation site of the growth process is formed. The concerted bond exchange between these addimers and the reconstructed surface dimers is found to be the atomistic mechanism that leads to the homoepitaxial growth. © 2001 Elsevier Science B.V.
      Keywords
      Adsorption kinetics
      Density functional calculations
      Epitaxy
      Growth
      Molecular dynamics
      Silicon
      Adsorption
      Chemical bonds
      Crystal orientation
      Deposition
      Epitaxial growth
      Molecular dynamics
      Morphology
      Nucleation
      Surface roughness
      Surface treatment
      Thermal effects
      Adatoms
      Addimers
      Density functional theory
      Homoepitaxy
      Surface reconstruction
      Silicon
      Permalink
      http://hdl.handle.net/11693/24860
      Published Version (Please cite this version)
      http://dx.doi.org/10.1016/S0039-6028(01)00961-X
      Collections
      • Department of Physics 2485
      Show full item record

      Browse

      All of BUIRCommunities & CollectionsTitlesAuthorsAdvisorsBy Issue DateKeywordsTypeDepartmentsCoursesThis CollectionTitlesAuthorsAdvisorsBy Issue DateKeywordsTypeDepartmentsCourses

      My Account

      Login

      Statistics

      View Usage StatisticsView Google Analytics Statistics

      Bilkent University

      If you have trouble accessing this page and need to request an alternate format, contact the site administrator. Phone: (312) 290 2976
      © Bilkent University - Library IT

      Contact Us | Send Feedback | Off-Campus Access | Admin | Privacy