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dc.contributor.authorErgun, A. S.en_US
dc.contributor.authorTemelkuran, B.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.contributor.authorAtalar, Abdullahen_US
dc.date.accessioned2016-02-08T10:35:10Z
dc.date.available2016-02-08T10:35:10Z
dc.date.issued2001en_US
dc.identifier.issn0885-3010
dc.identifier.urihttp://hdl.handle.net/11693/24843
dc.description.abstractCapacitive micromachine ultrasonic transducers (cMUT) have become an alternative to piezoelectric transducers in the past few years. They consist of many small circular membranes that are connected in parallel. In this work, we report a new detection method for cMUTs. We model the membranes as capacitors and the interconnections between the membranes as inductors. This kind of LC network is called an artificial transmission line. The vibrations of the membranes modulate the electrical length of the transmission line, which is proportional to the frequency of the signal through it. By measuring the electrical length of the artificial line at a high RF frequency (in the gigahertz range), the vibrations of the membranes can be detected in a very sensitive manner. For the devices we measured, we calculated the minimum detectable displacement to be in the order of 10 -5 Å/√Hz with a possible improvement to 10 -7 Å/√Hz.en_US
dc.language.isoEnglishen_US
dc.source.titleIEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Controlen_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/58.935710en_US
dc.subjectCapacitive micromachined ultrasonic transducersen_US
dc.subjectElectrical lengthen_US
dc.subjectUltrasound frequencyen_US
dc.subjectCapacitanceen_US
dc.subjectCapacitorsen_US
dc.subjectDemodulationen_US
dc.subjectElectric inductorsen_US
dc.subjectElectric variables measurementen_US
dc.subjectElectrodesen_US
dc.subjectMathematical modelsen_US
dc.subjectSignal detectionen_US
dc.subjectUltrasonicsen_US
dc.subjectVibrations (mechanical)en_US
dc.subjectUltrasonic transducersen_US
dc.titleA new detection method for capacitive micromachine ultrasonic transducersen_US
dc.typeArticleen_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.citation.spage932en_US
dc.citation.epage942en_US
dc.citation.volumeNumber48en_US
dc.citation.issueNumber4en_US
dc.identifier.doi10.1109/58.935710en_US
dc.publisherIEEEen_US
dc.contributor.bilkentauthorÖzbay, Ekmelen_US


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