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dc.contributor.authorPark, M.-A.en_US
dc.contributor.authorSavran, K.en_US
dc.contributor.authorKim, Y.-J.en_US
dc.date.accessioned2016-02-08T10:35:09Z
dc.date.available2016-02-08T10:35:09Z
dc.date.issued2001en_US
dc.identifier.issn0953-2048
dc.identifier.urihttp://hdl.handle.net/11693/24842
dc.description.abstractWeak localization has a strong influence on both the normal and superconducting properties of metals. In particular, since weak localization leads to the decoupling of electrons and phonons, the temperature dependence of resistance (i.e. λtr) decreases with increasing disorder, as manifested by Mooij's empirical rule. In addition, Testardi's universal correlation of Tc (i.e. λ) and the resistance ratio (i.e. λtr) follows. This understanding provides a new means to probe the phonon mechanism in superconductors, including MgB2. The merits of this method are its applicability to any superconductor and its reliability because the McMillan's electron-phonon coupling constant λ and λtr change in a broad range, from finite values to zero, due to weak localization. Karkin et al's preliminary data of irradiated MgB2 show the Testardi correlation, indicating that the dominant pairing mechanism in MgB2 is a phonon-mediated interaction.en_US
dc.language.isoEnglishen_US
dc.source.titleSuperconductor Science and Technologyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1088/0953-2048/14/7/103en_US
dc.subjectElectron tunnelingen_US
dc.subjectElectronic density of statesen_US
dc.subjectHeat resistanceen_US
dc.subjectIrradiationen_US
dc.subjectMagnesium compoundsen_US
dc.subjectPhononsen_US
dc.subjectReliabilityen_US
dc.subjectSuperconductivityen_US
dc.subjectThermal effectsen_US
dc.subjectElectron phonon coupling constanten_US
dc.subjectMagnesium bromideen_US
dc.subjectPhonon mechanismen_US
dc.subjectPhonon mediated interactionen_US
dc.subjectTestardi correlationen_US
dc.subjectWeak localizationen_US
dc.subjectSuperconducting materialsen_US
dc.titleA new method of probing the phonon mechanism in superconductors, including MgB2en_US
dc.typeArticleen_US
dc.departmentDepartment of Physicsen_US
dc.citation.spageL31en_US
dc.citation.epageL35en_US
dc.citation.volumeNumber14en_US
dc.citation.issueNumber7en_US
dc.identifier.doi10.1088/0953-2048/14/7/103en_US


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