A new method of probing the phonon mechanism in superconductors, including MgB2
Superconductor Science and Technology
L31 - L35
Item Usage Stats
MetadataShow full item record
Weak localization has a strong influence on both the normal and superconducting properties of metals. In particular, since weak localization leads to the decoupling of electrons and phonons, the temperature dependence of resistance (i.e. λtr) decreases with increasing disorder, as manifested by Mooij's empirical rule. In addition, Testardi's universal correlation of Tc (i.e. λ) and the resistance ratio (i.e. λtr) follows. This understanding provides a new means to probe the phonon mechanism in superconductors, including MgB2. The merits of this method are its applicability to any superconductor and its reliability because the McMillan's electron-phonon coupling constant λ and λtr change in a broad range, from finite values to zero, due to weak localization. Karkin et al's preliminary data of irradiated MgB2 show the Testardi correlation, indicating that the dominant pairing mechanism in MgB2 is a phonon-mediated interaction.
Electronic density of states
Electron phonon coupling constant
Phonon mediated interaction
Published Version (Please cite this version)http://dx.doi.org/10.1088/0953-2048/14/7/103
Showing items related by title, author, creator and subject.
Tiras, E.; Celik O.; Mutlu, S.; Ardali, S.; Lisesivdin, S.B.; Özbay, Ekmel (2012)The two-dimensional (2D) electron energy relaxation in Al 0.25Ga 0.75N/AlN/GaN heterostructures was investigated experimentally by using two experimental techniques; Shubnikov-de Haas (SdH) effect and classical Hall Effect. ...
Gökoǧlu G.; Erkişi, A. (2008)In this study, first principles calculation results of the second order elastic constants and lattice dynamics of two lanthanum monopnictides, LaN and LaBi, which crystallize in rock-salt structure (B1 phase), are presented. ...
Scattering analysis of two-dimensional electrons in AlGaN/GaN with bulk related parameters extracted by simple parallel conduction extraction method Lisesivdin, S. B.; Yildiz, A.; Balkan, N.; Kasap, M.; Ozcelik, S.; Özbay, Ekmel (American Institute of Physics, 2010-07-15)We carried out the temperature (22-350 K) and magnetic field (0.05 and 1.4 T) dependent Hall mobility and carrier density measurements on Al 0.22Ga0.78N/GaN heterostructures with AlN interlayer grown by metal-organic ...