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      • Department of Electrical and Electronics Engineering
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      45-GHz bandwidth-efficiency resonant-cavity-enhanced ITO-Schottky photodiodes

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      Author(s)
      Bıyıklı, Necmi
      Kimukin, I.
      Aytür, O.
      Gökkavas, M.
      Ünlü, M. S.
      Özbay, Ekmel
      Date
      2001
      Source Title
      IEEE Photonics Technology Letters
      Print ISSN
      1041-1135
      Publisher
      IEEE
      Volume
      13
      Issue
      7
      Pages
      705 - 707
      Language
      English
      Type
      Article
      Item Usage Stats
      278
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      262
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      Abstract
      High-speed Schottky photodiodes suffer from low efficiency mainly due to the thin absorption layers and the semitransparent Schottky-contact metals. We have designed, fabricated and characterized high-speed and high-efficiency AlGaAs-GaAs-based Schottky photodiodes using transparent indium-tin-oxide Schottky contact material and resonant cavity enhanced detector structure. The measured devices displayed resonance peaks around 820 nm with 75% maximum peak efficiency and an experimental setup limited temporal response of 11 ps pulsewidth. The resulting 45-GHz bandwidth-efficiency product obtained from these devices corresponds to the best performance reported to date for vertically illuminated Schottky photodiodes.
      Keywords
      Bandwidth-efficiency
      High-speed
      Indium-tin-oxide
      Photodetect ors
      Photodiodes
      Resonant-cavity enhancement
      Schottky photodiode
      Aluminum gallium arsenide
      Indium tin oxide
      Cavity resonators
      Photodetectors
      Quantum efficiency
      Resonance
      Scanning electron microscopy
      Schottky barrier diodes
      Semiconducting aluminum compounds
      Semiconducting gallium arsenide
      Semiconducting indium compounds
      Photodiodes
      Permalink
      http://hdl.handle.net/11693/24841
      Published Version (Please cite this version)
      http://dx.doi.org/10.1109/68.930421
      Collections
      • Department of Electrical and Electronics Engineering 3868
      • Department of Physics 2485
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