45-GHz bandwidth-efficiency resonant-cavity-enhanced ITO-Schottky photodiodes
Ünlü, M. S.
IEEE Photonics Technology Letters
705 - 707
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High-speed Schottky photodiodes suffer from low efficiency mainly due to the thin absorption layers and the semitransparent Schottky-contact metals. We have designed, fabricated and characterized high-speed and high-efficiency AlGaAs-GaAs-based Schottky photodiodes using transparent indium-tin-oxide Schottky contact material and resonant cavity enhanced detector structure. The measured devices displayed resonance peaks around 820 nm with 75% maximum peak efficiency and an experimental setup limited temporal response of 11 ps pulsewidth. The resulting 45-GHz bandwidth-efficiency product obtained from these devices corresponds to the best performance reported to date for vertically illuminated Schottky photodiodes.
Aluminum gallium arsenide
Indium tin oxide
Scanning electron microscopy
Schottky barrier diodes
Semiconducting aluminum compounds
Semiconducting gallium arsenide
Semiconducting indium compounds