45-GHz bandwidth-efficiency resonant-cavity-enhanced ITO-Schottky photodiodes
Date
2001Source Title
IEEE Photonics Technology Letters
Print ISSN
1041-1135
Publisher
IEEE
Volume
13
Issue
7
Pages
705 - 707
Language
English
Type
ArticleItem Usage Stats
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Abstract
High-speed Schottky photodiodes suffer from low efficiency mainly due to the thin absorption layers and the semitransparent Schottky-contact metals. We have designed, fabricated and characterized high-speed and high-efficiency AlGaAs-GaAs-based Schottky photodiodes using transparent indium-tin-oxide Schottky contact material and resonant cavity enhanced detector structure. The measured devices displayed resonance peaks around 820 nm with 75% maximum peak efficiency and an experimental setup limited temporal response of 11 ps pulsewidth. The resulting 45-GHz bandwidth-efficiency product obtained from these devices corresponds to the best performance reported to date for vertically illuminated Schottky photodiodes.
Keywords
Bandwidth-efficiencyHigh-speed
Indium-tin-oxide
Photodetect ors
Photodiodes
Resonant-cavity enhancement
Schottky photodiode
Aluminum gallium arsenide
Indium tin oxide
Cavity resonators
Photodetectors
Quantum efficiency
Resonance
Scanning electron microscopy
Schottky barrier diodes
Semiconducting aluminum compounds
Semiconducting gallium arsenide
Semiconducting indium compounds
Photodiodes