45-GHz bandwidth-efficiency resonant-cavity-enhanced ITO-Schottky photodiodes
Please cite this item using this persistent URL
http://hdl.handle.net/11693/24841Journal
IEEE Photonics Technology Letters
Published as
http://dx.doi.org/10.1109/68.930421Collections
- Research Paper [6026]
Abstract
High-speed Schottky photodiodes suffer from low efficiency mainly due to the thin absorption layers and the semitransparent Schottky-contact metals. We have designed, fabricated and characterized high-speed and high-efficiency AlGaAs-GaAs-based Schottky photodiodes using transparent indium-tin-oxide Schottky contact material and resonant cavity enhanced detector structure. The measured devices displayed resonance peaks around 820 nm with 75% maximum peak efficiency and an experimental setup limited temporal response of 11 ps pulsewidth. The resulting 45-GHz bandwidth-efficiency product obtained from these devices corresponds to the best performance reported to date for vertically illuminated Schottky photodiodes.
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