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      Low-temperature photoluminescence study of GaS0.5Se0.5 layered crystals

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      Author
      Aydnl, A.
      Gasanly, N. M.
      Gökşen, K.
      Date
      2001
      Source Title
      Materials Research Bulletin
      Print ISSN
      0025-5408
      Publisher
      Elsevier Science
      Volume
      36
      Issue
      10
      Pages
      1823 - 1832
      Language
      English
      Type
      Article
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      Abstract
      Photoluminescence (PL) spectra of GaS0.5Se0.5 layered single crystals have been studied in the wavelength range of 565-860 nm and in the temperature range of 15-170 K. Two PL bands centered at 585 nm (2.120 eV) and 640 nm (1.938 eV) were observed at T = 15 K. Variations of both bands were studied as a function of excitation laser intensity in the range from 10-3 to 15.9 W cm-2. These bands are attributed to recombination of charge carriers through donor-acceptor pairs located in the band gap. Radiative transitions from shallow donor levels located at 0.029 and 0.040 eV below the bottom of the conduction band to deep acceptor levels located 0.185 and 0.356 eV above the top of the valence band are suggested to be responsible for the observed A- and B-bands in the PL spectra, respectively. A simple energy level diagram explaining the recombination process is proposed.
      Keywords
      A. Chalcogenides
      A. Semiconductors
      D. Luminescence
      D. Optical Properties
      Charge carriers
      Optical properties
      Photoluminescence
      Single crystals
      Chalcogenides
      Gallium sulfur selenide
      Semiconducting gallium compounds
      Permalink
      http://hdl.handle.net/11693/24838
      Published Version (Please cite this version)
      http://dx.doi.org/10.1016/S0025-5408(01)00635-3
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      • Department of Physics 2299
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