Strong enhancement of spontaneous emission in amorphous-silicon-nitride photonic crystal based coupled-microcavity structures
Date
2001Source Title
Applied Physics A: Materials Science and Processing
Print ISSN
0947-8396
Publisher
Wiley
Volume
73
Issue
1
Pages
125 - 127
Language
English
Type
ArticleItem Usage Stats
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Abstract
We investigated photoluminescence (PL) from one-dimensional photonic band gap structures. The photonic crystals, a Fabry-Perot (FP) resonator and a coupled-microcavity (CMC) structure, were fabricated by using alternating hydrogenated amorphous-silicon-nitride and hydrogenated amorphous-silicon-oxide layers. It was observed that these structures strongly modify the PL spectra from optically active amorphous-silicon-nitride thin films. Narrow-band and wide-band PL spectra were achieved in the FP microcavity and the CMC structure, respectively. The angle dependence of PL peak of the FP resonator was also investigated. We also observed that the spontaneous emission increased drastically at the coupled-cavity band edge of the CMC structure due to extremely low group velocity and long photon lifetime. The measurements agree well with the transfer-matrix method results and the prediction of the tight-binding approximation.
Keywords
Amorphous filmsBand structure
Cavity resonators
Photoluminescence
Refractive index
Silicon nitride
Microcavity structures
Photonic crystal based coupled-microcavity structures
Photonic crystals
Spontaneous emission