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      Strong enhancement of spontaneous emission in amorphous-silicon-nitride photonic crystal based coupled-microcavity structures

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      Author(s)
      Bayındır, Mehmet
      Tanriseven, S.
      Aydınlı, Atilla
      Özbay, Ekmel
      Date
      2001
      Source Title
      Applied Physics A: Materials Science and Processing
      Print ISSN
      0947-8396
      Publisher
      Wiley
      Volume
      73
      Issue
      1
      Pages
      125 - 127
      Language
      English
      Type
      Article
      Item Usage Stats
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      186
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      Abstract
      We investigated photoluminescence (PL) from one-dimensional photonic band gap structures. The photonic crystals, a Fabry-Perot (FP) resonator and a coupled-microcavity (CMC) structure, were fabricated by using alternating hydrogenated amorphous-silicon-nitride and hydrogenated amorphous-silicon-oxide layers. It was observed that these structures strongly modify the PL spectra from optically active amorphous-silicon-nitride thin films. Narrow-band and wide-band PL spectra were achieved in the FP microcavity and the CMC structure, respectively. The angle dependence of PL peak of the FP resonator was also investigated. We also observed that the spontaneous emission increased drastically at the coupled-cavity band edge of the CMC structure due to extremely low group velocity and long photon lifetime. The measurements agree well with the transfer-matrix method results and the prediction of the tight-binding approximation.
      Keywords
      Amorphous films
      Band structure
      Cavity resonators
      Photoluminescence
      Refractive index
      Silicon nitride
      Microcavity structures
      Photonic crystal based coupled-microcavity structures
      Photonic crystals
      Spontaneous emission
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      http://hdl.handle.net/11693/24837
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