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dc.contributor.authorBayindir, M.en_US
dc.contributor.authorKural, C.en_US
dc.contributor.authorOzbay, E.en_US
dc.date.accessioned2016-02-08T10:34:23Z
dc.date.available2016-02-08T10:34:23Z
dc.date.issued2001en_US
dc.identifier.issn1464-4258
dc.identifier.urihttp://hdl.handle.net/11693/24790
dc.description.abstractWe present a detailed theoretical and experimental study of the evanescent coupled optical microcavity modes in one-dimensional photonic bandgap structures. The coupled-cavity samples are fabricated by depositing alternating hydrogenated amorphous silicon nitride and silicon oxide layers. Splitting of the eigenmodes and formation of a defect band due to interaction between the neighbouring localized cavity modes are experimentally observed. Corresponding field patterns and the transmission spectra are obtained by using transfer matrix method (TMM) simulations. A theoretical model based on the classical wave analogue of the tight-binding (TB) picture is developed and applied to these structures. Experimental results are in good agreement with the predictions of the TB approximation and the TMM simulations.en_US
dc.language.isoEnglishen_US
dc.source.titleJournal of Optics A: Pure and Applied Opticsen_US
dc.relation.isversionofhttp://dx.doi.org/10.1088/1464-4258/3/6/369en_US
dc.subjectLocalizationen_US
dc.subjectMicrocavityen_US
dc.subjectPhotonic bandgapen_US
dc.subjectTight-binding approximationen_US
dc.subjectApproximation theoryen_US
dc.subjectCrystal defectsen_US
dc.subjectEigenvalues and eigenfunctionsen_US
dc.subjectEnergy gapen_US
dc.subjectHydrogenationen_US
dc.subjectSilicon nitrideen_US
dc.subjectOptical microcavitiesen_US
dc.subjectPhotonic bandgap structuresen_US
dc.subjectTransfer matrix method (TMM)en_US
dc.subjectPhotonsen_US
dc.titleCoupled optical microcavities in one-dimensional photonic bandgap structuresen_US
dc.typeArticleen_US
dc.departmentDepartment of Physicsen_US
dc.citation.spageS184en_US
dc.citation.epageS189en_US
dc.citation.volumeNumber3en_US
dc.citation.issueNumber6en_US
dc.identifier.doi10.1088/1464-4258/3/6/369en_US
dc.publisherInstitute of Physics Publishingen_US


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