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      Defect luminescence in undoped p-type GaSe

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      Author(s)
      Aydınlı, Atilla
      Gasanly, N. M.
      Gökşen, K.
      Date
      2001
      Source Title
      Philosophical Magazine Letters
      Print ISSN
      0950-0839
      Electronic ISSN
      1362-3036
      Publisher
      Taylor & Francis
      Volume
      81
      Issue
      12
      Pages
      859 - 867
      Language
      English
      Type
      Article
      Item Usage Stats
      195
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      193
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      Abstract
      Photoluminescence (PL) spectra of undoped single crystals of the layered semiconductor GaSe have been measured in the temperature range from 10 K to room temperature and in the wavelength range from 635 to 750 nm. Two wide bands centred at 644 and 695 nm have been observed at T = 10 K. A detailed analysis of the spectra obtained by varying the excitation intensity and temperature resulted in the identification of the levels involved. A simple model is proposed to account for the observed data.
      Keywords
      Photoluminescence
      Semiconducting gallium compounds
      Spectrum analysis
      Thermoanalysis
      Excitation intensity
      Wavelengths
      Single crystals
      Permalink
      http://hdl.handle.net/11693/24773
      Published Version (Please cite this version)
      http://dx.doi.org/10.1080/09500830110093885
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