Defect luminescence in undoped p-type GaSe

Date
2001
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Source Title
Philosophical Magazine Letters
Print ISSN
0950-0839
Electronic ISSN
1362-3036
Publisher
Taylor & Francis
Volume
81
Issue
12
Pages
859 - 867
Language
English
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Abstract

Photoluminescence (PL) spectra of undoped single crystals of the layered semiconductor GaSe have been measured in the temperature range from 10 K to room temperature and in the wavelength range from 635 to 750 nm. Two wide bands centred at 644 and 695 nm have been observed at T = 10 K. A detailed analysis of the spectra obtained by varying the excitation intensity and temperature resulted in the identification of the levels involved. A simple model is proposed to account for the observed data.

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