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dc.contributor.authorGasanly, N. M.en_US
dc.contributor.authorAydınlı, A.en_US
dc.contributor.authorÖzkan, H.en_US
dc.date.accessioned2016-02-08T10:34:03Z
dc.date.available2016-02-08T10:34:03Z
dc.date.issued2001en_US
dc.identifier.issn0232-1300
dc.identifier.urihttp://hdl.handle.net/11693/24764
dc.description.abstractRaman spectra of GaSe layered crystal have been measured using a He-Ne laser and temperature tuning the free-to-bound gap in the range 10-290 K. Resonance enhancement of E’’(2) mode has been observed for both incident and scattered photon energies equal to the free-to-bound transition energy.en_US
dc.language.isoEnglishen_US
dc.source.titleCrystal Research and Technologyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1002/1521-4079(200112)36:12<1393en_US
dc.subjectGaSeen_US
dc.subjectLayered crystalsen_US
dc.subjectSemiconductor compoundsen_US
dc.subjectElectron transitionsen_US
dc.subjectHelium neon lasersen_US
dc.subjectPhotonsen_US
dc.subjectRaman scatteringen_US
dc.subjectResonanceen_US
dc.subjectSpectrum analysisen_US
dc.subjectSynthesis (chemical)en_US
dc.subjectResonant Raman scattering (RRS)en_US
dc.subjectPolycrystalsen_US
dc.titleResonant Raman scattering near the free-to-bound transition in undoped p-GaSeen_US
dc.typeArticleen_US
dc.departmentDepartment of Physics
dc.citation.spage1393en_US
dc.citation.epage1398en_US
dc.citation.volumeNumber36en_US
dc.citation.issueNumber12en_US
dc.identifier.doi10.1002/1521-4079(200112)36:12<1393en_US
dc.publisherWileyen_US


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