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dc.contributor.authorHoffmann, P. M.en_US
dc.contributor.authorJeffery, S.en_US
dc.contributor.authorPethica, J. B.en_US
dc.contributor.authorÖzer, H. Ö.en_US
dc.contributor.authorOral, A.en_US
dc.date.accessioned2016-02-08T10:33:56Z
dc.date.available2016-02-08T10:33:56Z
dc.date.issued2001en_US
dc.identifier.issn0031-9007
dc.identifier.urihttp://hdl.handle.net/11693/24755
dc.description.abstractAtomic scale dissipation is of great interest in nanomechanics and atomic manipulation. We present dissipation measurements with a linearized, ultrasmall amplitude atomic force microscope which is capable of measuring dissipation at chosen, fixed separations. We show that the dynamic dissipation in the noncontact regime is of the order of a few 10–100 meV per cycle. This dissipation is likely due to the motion of a bistable atomic defect in the tip-surface region. In the contact regime we observe dc hysteresis associated with nanoscale plasticity. We find the hysteretic energy loss to be 1 order of magnitude higher for a silicon surface than for copper.en_US
dc.language.isoEnglishen_US
dc.source.titlePhysical Review Lettersen_US
dc.subjectApproximation theoryen_US
dc.subjectAtomic force microscopyen_US
dc.subjectEnergy dissipationen_US
dc.subjectHysteresisen_US
dc.subjectKinetic energyen_US
dc.subjectPlasticityen_US
dc.subjectAtomic lossesen_US
dc.subjectAtomic physicsen_US
dc.titleEnergy dissipation in atomic force microscopy and atomic loss processesen_US
dc.typeArticleen_US
dc.departmentDepartment of Physicsen_US
dc.citation.spage265502-1en_US
dc.citation.epage265502-4en_US
dc.citation.volumeNumber87en_US
dc.citation.issueNumber26en_US
dc.publisherAmerican Physical Societyen_US


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