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dc.contributor.authorGasanly, N. M.en_US
dc.contributor.authorAydnl, A.en_US
dc.contributor.authorÖzkan, H.en_US
dc.contributor.authorKocabaş, C.en_US
dc.date.accessioned2016-02-08T10:33:49Z
dc.date.available2016-02-08T10:33:49Z
dc.date.issued2002en_US
dc.identifier.issn0025-5408
dc.identifier.urihttp://hdl.handle.net/11693/24749
dc.description.abstractThe temperature dependencies (15-300 K) of seven Raman-active mode frequencies and linewidths in layered gallium selenide have been measured in the frequency range from 10 to 320 cm-1. We observed softening and broadening of the optical phonon lines with increasing temperature. Comparison between the experimental data and theories of the shift and broadening of the intralayer phonon lines during heating of the crystal showed that the experimental dependencies can be explained by the contributions from thermal expansion, lattice anharmonicity and crystal disorder. The pure-temperature contribution (phonon-phonon coupling) is due to three-phonon processes. Moreover, it was established that the effect of crystal disorder on the linewidth broadening of TO mode is stronger than that of LO mode.en_US
dc.language.isoEnglishen_US
dc.source.titleMaterials Research Bulletinen_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/S0025-5408(01)00810-8en_US
dc.subjectA. Chalcogenidesen_US
dc.subjectB. Semiconductorsen_US
dc.subjectC. Raman spectroscopyen_US
dc.subjectD. Optical propertiesen_US
dc.subjectCrystal defectsen_US
dc.subjectCrystal latticesen_US
dc.subjectOptical propertiesen_US
dc.subjectPhononsen_US
dc.subjectRaman scatteringen_US
dc.subjectRaman spectroscopyen_US
dc.subjectThermal expansionen_US
dc.subjectLayered crystalsen_US
dc.subjectSemiconducting gallium compoundsen_US
dc.titleTemperature-dependent Raman scattering spectra of ε-GaSe layered crystalen_US
dc.typeArticleen_US
dc.departmentDepartment of Physics
dc.citation.spage169en_US
dc.citation.epage176en_US
dc.citation.volumeNumber37en_US
dc.citation.issueNumber1en_US
dc.identifier.doi10.1016/S0025-5408(01)00810-8en_US
dc.publisherElsevier Scienceen_US


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