Soft x-ray photoemission studies of the HfO2/SiO2/Si system

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Soft x-ray photoemission studies of the HfO2 SiO2 Si system.pdf (249.36 KB)

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2002

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Abstract

Soft x-ray photoelectron spectroscopy with synchrotron radiation was employed to study the valence-band offsets for the HfO2/SiO 2/Si and HfO2/SiOxNy/Si systems. We obtained a valence-band offset difference of -1.05±0.1eV between HfO 2 (in HfO2/15ÅSiO2/Si) and SiO 2 (in 15 Å SiO2/Si). There is no measurable difference between the HfO2 valence-band maximum positions of the HfO2/10ÅSiOxNy/Si and HfO 2/15ÅSiO2/Si systems. © 2002 American Institute of Physics.

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Applied Physics Letters

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American Institute of Physics

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Soft x - ray photoelectron spectroscopy, Soft x - ray photoemission, Valence - band maximums, Valence - band offset, Hafnium oxides, Silicon, Valence bands, X ray photoelectron spectroscopy, Silicon compounds

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http://hdl.handle.net/11693/24729

Published Version (Please cite this version)

http://dx.doi.org/10.1063/1.1450049

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Scholarly Publications - Chemistry

Language

English

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Article