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dc.contributor.authorGasanly, N. M.en_US
dc.contributor.authorAydinli, A.en_US
dc.contributor.authorKocabas, C.en_US
dc.contributor.authorÖzkan H.en_US
dc.date.accessioned2016-02-08T10:33:02Z
dc.date.available2016-02-08T10:33:02Z
dc.date.issued2002en_US
dc.identifier.issn0031-8949
dc.identifier.urihttp://hdl.handle.net/11693/24694
dc.description.abstractThe temperature dependencies (10-300 K) of the eight Raman-active mode frequencies and linewidths in GaSe0.5S0.5 layered crystal have been measured in the frequency range from 10 to 320 cm-1. We observed softening and broadening of the optical phonon lines with increasing temperature. Comparison of the experimental data with the theories of the shift and broadening of the interlayer and intralayer phonon lines showed that the temperature dependencies can be explained by the contributions from thermal expansion, lattice anharmonicity and crystal disorder. The purely anharmonic contribution (phonon-phonon coupling) is found to be due to three-phonon processes. It was established that the effect of crystal disorder on the broadening of phonon lines is greater for GaSe0.5S0.5 than for binary compounds GaSe and GaS.en_US
dc.language.isoEnglishen_US
dc.source.titlePhysica Scriptaen_US
dc.relation.isversionofhttp://dx.doi.org/10.1238/Physica.Regular.065a00534en_US
dc.subjectCrystal growthen_US
dc.subjectFrequenciesen_US
dc.subjectRaman scatteringen_US
dc.subjectSemiconducting gallium compoundsen_US
dc.subjectSingle crystalsen_US
dc.subjectThermal expansionen_US
dc.subjectOptical phononsen_US
dc.subjectPhononsen_US
dc.titleAnharmonicity of zone-center optical phonons: Raman scattering spectra of GaSe0.5S0.5 layered crystalen_US
dc.typeArticleen_US
dc.departmentDepartment of Physics
dc.citation.spage534en_US
dc.citation.epage538en_US
dc.citation.volumeNumber65en_US
dc.citation.issueNumber6en_US
dc.identifier.doi10.1238/Physica.Regular.065a00534en_US
dc.publisherIOPscienceen_US


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