Filtering characteristics of hybrid integrated polymer and compound semiconductor waveguides
Date
2002Source Title
Journal of Lightwave Technology
Print ISSN
0733-8724
Publisher
IEEE
Volume
20
Issue
8
Pages
1530 - 1536
Language
English
Type
ArticleItem Usage Stats
243
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Abstract
This paper reports a study on a compact filter fabricated using hybrid integration of compound semiconductors and polymers. A GaAs epilayer is glued onto a polymer channel waveguide forming a highly asymmetrical directional coupler. This approach results in a narrow band filter due to very different dispersion characteristics of the compound semiconductor and the polymer materials. Furthermore, fiber coupling loss has been significantly reduced, since the input and output coupling is done through the polymer waveguide. Filtering characteristics can be engineered by changing the thickness and the length of the semiconductor epilayer. This can be done precisely using etch stop layers and noncritical lithography. The spectral response of such a filter can also be tuned electronically either using the electro-optic properties of the compound semiconductor or the thermo-optic properties of the polymer.
Keywords
Bandstop filterHybrid integration
Tunable filter
Wavelength division multiplexing (WDM)
Dispersion (waves)
Electrooptical effects
Integrated optoelectronics
Lithography
Optical filters
Optical multilayers
Optical properties
Semiconducting gallium arsenide
Semiconductor device manufacture
Wavelength division multiplexing
Bandstop filter
Compound semiconductor waveguides
Fiber coupling loss
Gallium arsenide epilayer
Hybrid integrated polymer waveguides
Narrow band filter
Polymer channel waveguide
Thermooptic properties
Tunable filter
Optical waveguides
Permalink
http://hdl.handle.net/11693/24665Published Version (Please cite this version)
http://dx.doi.org/10.1109/JLT.2002.800783Collections
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