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dc.contributor.authorSandhu, A.en_US
dc.contributor.authorMasuda, H.en_US
dc.contributor.authorOral, A.en_US
dc.contributor.authorYamada, A.en_US
dc.contributor.authorKonagai, M.en_US
dc.date.accessioned2016-02-08T10:32:32Z
dc.date.available2016-02-08T10:32:32Z
dc.date.issued2002en_US
dc.identifier.issn0304-3991
dc.identifier.urihttp://hdl.handle.net/11693/24661
dc.description.abstractA room temperature scanning Hall probe microscope system utilizing GaAs/AlGaAs and bismuth micro-Hall probes was used for magnetic imaging of ferromagnetic domain structures on the surfaces of crystalline thin film garnets and permanent magnets. The Bi micro-Hall probes had dimensions ranging between 0.25 and 2.8μm2 and were fabricated using a combination of optical lithography and focused ion beam milling. The use of bismuth was found to overcome surface depletion effects associated with semiconducting micro-Hall probes. Our experiments demonstrated that Bi is a practical choice of material for fabricating sub-micron sized Hall sensors.en_US
dc.language.isoEnglishen_US
dc.source.titleUltramicroscopyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/S0304-3991(02)00087-6en_US
dc.subjectBismuthen_US
dc.subjectFerromagnetic domainsen_US
dc.subjectGaAsen_US
dc.subjectGarnetsen_US
dc.subjectHall sensorsen_US
dc.subjectNanotechnologyen_US
dc.subjectPermanent magneticsen_US
dc.subjectBismuthen_US
dc.subjectGarnetsen_US
dc.subjectIon beamsen_US
dc.subjectPermanent magnetsen_US
dc.subjectPhotolithographyen_US
dc.subjectSemiconducting gallium arsenideen_US
dc.subjectThin filmsen_US
dc.subjectMicro-Hall probesen_US
dc.subjectMicroscopic examinationen_US
dc.subjectBismuthen_US
dc.subjectCrystallinen_US
dc.subjectFerromagnetic materialen_US
dc.subjectIonen_US
dc.subjectDepletionen_US
dc.subjectFilmen_US
dc.subjectImagingen_US
dc.subjectMagneten_US
dc.subjectMicroscopyen_US
dc.subjectRoom temperatureen_US
dc.subjectSemiconductoren_US
dc.subjectSensoren_US
dc.titleRoom temperature scanning Hall probe microscopy using GaAs/AlGaAs and Bi micro-hall probesen_US
dc.typeArticleen_US
dc.departmentDepartment of Physics
dc.citation.spage97en_US
dc.citation.epage101en_US
dc.citation.volumeNumber91en_US
dc.citation.issueNumber1-4en_US
dc.identifier.doi10.1016/S0304-3991(02)00087-6en_US
dc.publisherElsevier Science B.V.en_US


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