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      Electron initiated impact ionization in AlGaN alloys

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      Author(s)
      Bulutay, C.
      Date
      2002
      Source Title
      Semiconductor Science and Technology
      Print ISSN
      0268-1242
      Publisher
      Institute of Physics
      Volume
      17
      Issue
      10
      Pages
      L59 - L62
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      Detailed impact ionization (II) analysis of electrons is presented for AlGaN alloys as a vital resource for solar-blind avalanche photodiode and high power transistor applications. Necessary ingredients for the II characterization are supplied from a recent experiment on the GaN end, and a Keldysh analysis for the AlN end, of the alloy AlGaN. High-field electron dynamics are simulated using an ensemble Monte Carlo framework, accounting for all valleys in the lowest two conduction bands, obtained from accurate empirical pseudopotential band structure computations. The effect of alloy scattering on II is considered and observed to be significant. For any AlxGa1-xN alloy, the electron II coefficients are found to obey the form, A exp(-K/F), for the electric field, F.
      Keywords
      Aluminum alloys
      Band structure
      Electric field effects
      Electrons
      Monte Carlo methods
      Photodiodes
      Conduction bands
      Impact ionization
      Permalink
      http://hdl.handle.net/11693/24643
      Published Version (Please cite this version)
      http://dx.doi.org/10.1088/0268-1242/17/10/102
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      • Department of Physics 2550
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