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      Solar-blind AlGaN-based Schottky photodiodes with low noise and high detectivity

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      Author(s)
      Bıyıklı, Necmi
      Aytur, O.
      Kimukin, I.
      Tut, T.
      Özbay, Ekmel
      Date
      2002
      Source Title
      Applied Physics Letters
      Print ISSN
      0003-6951
      Publisher
      American Institute of Physics
      Volume
      81
      Issue
      17
      Pages
      3272 - 3274
      Language
      English
      Type
      Article
      Item Usage Stats
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      322
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      Abstract
      We report on the design, fabrication, and characterization of solar-blind Schottky photodiodes with low noise and high detectivity. The devices were fabricated on n-/n+ AlGaN/GaN heterostructures using a microwave compatible fabrication process. True solar-blind operation with a cutoff wavelength of ∼274nm was achieved with AlxGa1-xN (x=0.38) absorption layer. The solar-blind detectors exhibited <1.8nA/cm2 dark current density in the 0-25 V reverse bias regime, and a maximum quantum efficiency of 42% around 267 nm. The photovoltaic detectivity of the devices were in excess of 2.6×1012cmHz1/2/W, and the detector noise was 1/f limited with a noise power density less than 3×10-29A2/Hz at 10 kHz. © 2002 American Institute of Physics.
      Keywords
      Absorption layer
      AlGaN/GaN heterostructures
      Cutoff wavelengths
      Detectivity
      Detector noise
      Fabrication process
      Low noise
      Noise power
      Reverse bias
      Schottky photodiodes
      Solar-blind
      Solar-blind detectors
      Gallium
      Gallium nitride
      Photodiodes
      Fabrication
      Permalink
      http://hdl.handle.net/11693/24635
      Published Version (Please cite this version)
      http://dx.doi.org/10.1063/1.1516856
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      • Department of Electrical and Electronics Engineering 4011
      • Department of Physics 2550
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