Solar-blind AlGaN-based Schottky photodiodes with low noise and high detectivity
Date
2002Source Title
Applied Physics Letters
Print ISSN
0003-6951
Publisher
American Institute of Physics
Volume
81
Issue
17
Pages
3272 - 3274
Language
English
Type
ArticleItem Usage Stats
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Abstract
We report on the design, fabrication, and characterization of solar-blind Schottky photodiodes with low noise and high detectivity. The devices were fabricated on n-/n+ AlGaN/GaN heterostructures using a microwave compatible fabrication process. True solar-blind operation with a cutoff wavelength of ∼274nm was achieved with AlxGa1-xN (x=0.38) absorption layer. The solar-blind detectors exhibited <1.8nA/cm2 dark current density in the 0-25 V reverse bias regime, and a maximum quantum efficiency of 42% around 267 nm. The photovoltaic detectivity of the devices were in excess of 2.6×1012cmHz1/2/W, and the detector noise was 1/f limited with a noise power density less than 3×10-29A2/Hz at 10 kHz. © 2002 American Institute of Physics.
Keywords
Absorption layerAlGaN/GaN heterostructures
Cutoff wavelengths
Detectivity
Detector noise
Fabrication process
Low noise
Noise power
Reverse bias
Schottky photodiodes
Solar-blind
Solar-blind detectors
Gallium
Gallium nitride
Photodiodes
Fabrication