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dc.contributor.authorSevik, C.en_US
dc.contributor.authorBulutay, C.en_US
dc.date.accessioned2016-02-08T10:30:43Z
dc.date.available2016-02-08T10:30:43Z
dc.date.issued2003en_US
dc.identifier.issn1350-2433
dc.identifier.urihttp://hdl.handle.net/11693/24530
dc.description.abstractThe authors present an analysis of impact ionisation (II) and related hot electron effects in submicron sized GaN, AlN and their ternary alloys, all of which can support very high field regimes, reaching a few megavolts per centimetre (MV/cm). The proposed high field transport methodology is based on the ensemble Monte Carlo technique, with all major scattering mechanisms incorporated. As a test-bed for understanding II and hot electron effects, an n+-n-n+ channel device is employed having a 0.1 μm thick n-region. The time evolution of the electron density along the device is seen to display oscillations in the unintentionally doped n-region, until steady state is established. The fermionic degeneracy effects are observed to be operational especially at high fields within the anode n+-region. For AlxGa1-xN-based systems, it can be noted that due to alloy scattering, carriers cannot acquire the velocities attained by the GaN and AlN counterparts. Finally, at very high fields II is shown to introduce a substantial energy loss mechanism for the energetic carriers that have just traversed the unintentionally doped n-region.en_US
dc.language.isoEnglishen_US
dc.source.titleIEE Proceedings: Optoelectronicsen_US
dc.relation.isversionofhttp://dx.doi.org/10.1049/ip-opt:20030047en_US
dc.subjectAlloysen_US
dc.subjectCarrier concentrationen_US
dc.subjectElectron opticsen_US
dc.subjectElectron scatteringen_US
dc.subjectIonizationen_US
dc.subjectMonte Carlo methodsen_US
dc.subjectSemiconducting aluminum compoundsen_US
dc.subjectSemiconducting gallium compoundsen_US
dc.subjectSemiconductor dopingen_US
dc.subjectHot electron effectsen_US
dc.subjectSubmicron sized aluminum nitrideen_US
dc.subjectSubmicron sized gallium nitrideen_US
dc.subjectSubmicron structuresen_US
dc.subjectTernary alloysen_US
dc.subjectSemiconductor device structuresen_US
dc.titleHot electron effects in unipolar n-type submicron structures based on GaN, AlN and their ternary alloysen_US
dc.typeArticleen_US
dc.departmentDepartment of Physicsen_US
dc.citation.spage86en_US
dc.citation.epage88en_US
dc.citation.volumeNumber150en_US
dc.citation.issueNumber1en_US
dc.identifier.doi10.1049/ip-opt:20030047en_US
dc.publisherThe Institution of Engineering and Technologyen_US


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