Thermally stimulated currents in n-InS single crystals
Gasanly, N. M.
Yuksek, N. S.
Materials Research Bulletin
699 - 704
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Thermally stimulated current measurements are carried out on as-grown n-InS single crystals in the temperature range of 10-125 K. Experimental evidence is found for four trapping centers present in InS. They are located at 20, 35, 60 and 130meV. The trap parameters have been determined by various methods of analysis, and they agree well with each other.
Semiconducting indium compounds