50 nm Hall Sensors for Room Temperature Scanning Hall Probe Microscopy
Date
2004
Authors
Sandhu, A.
Kurosawa, K.
Dede, M.
Oral, A.
Editor(s)
Advisor
Supervisor
Co-Advisor
Co-Supervisor
Instructor
Source Title
Japanese Journal of Applied Physics, Part 1 : Regular Papers and Short Notes and Review Papers
Print ISSN
0021-4922
Electronic ISSN
Publisher
Institute of Physics Publishing
Volume
43
Issue
2
Pages
777 - 778
Language
English
Type
Journal Title
Journal ISSN
Volume Title
Series
Abstract
Bismuth nano-Hall sensors with dimensions ∼50nm × 50 nm were fabricated using a combination of optical lithography and focused ion beam milling. The Hall coefficient, series resistance and optimum magnetic field sensitivity of the sensors were 4 × 10-4 Ω/G, 9.1kΩ and 0.8G/√Hz, respectively. A 50nm nano-Bi Hall sensor was installed into a room temperature scanning Hall probe microscope and successfully used for directly imaging ferromagnetic domains of low coercivity garnet thin films.