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dc.contributor.authorSandhu, A.en_US
dc.contributor.authorKurosawa, K.en_US
dc.contributor.authorDede, M.en_US
dc.contributor.authorOral, A.en_US
dc.date.accessioned2016-02-08T10:27:42Z
dc.date.available2016-02-08T10:27:42Z
dc.date.issued2004en_US
dc.identifier.issn0021-4922
dc.identifier.urihttp://hdl.handle.net/11693/24329
dc.description.abstractBismuth nano-Hall sensors with dimensions ∼50nm × 50 nm were fabricated using a combination of optical lithography and focused ion beam milling. The Hall coefficient, series resistance and optimum magnetic field sensitivity of the sensors were 4 × 10-4 Ω/G, 9.1kΩ and 0.8G/√Hz, respectively. A 50nm nano-Bi Hall sensor was installed into a room temperature scanning Hall probe microscope and successfully used for directly imaging ferromagnetic domains of low coercivity garnet thin films.en_US
dc.language.isoEnglishen_US
dc.source.titleJapanese Journal of Applied Physics, Part 1 : Regular Papers and Short Notes and Review Papersen_US
dc.subjectHall sensorsen_US
dc.subjectMagnetic domainsen_US
dc.subjectNanomagneticsen_US
dc.subjectScanning hall probe microscopyen_US
dc.subjectCoercive forceen_US
dc.subjectFerromagnetismen_US
dc.subjectIon beamsen_US
dc.subjectLithographyen_US
dc.subjectMagnetic domainsen_US
dc.subjectMagnetic field effectsen_US
dc.subjectPhotoresistsen_US
dc.subjectScanning tunneling microscopyen_US
dc.subjectHall sensorsen_US
dc.subjectScanning Hall probe microscopyen_US
dc.subjectSensorsen_US
dc.title50 nm Hall Sensors for Room Temperature Scanning Hall Probe Microscopyen_US
dc.typeArticleen_US
dc.departmentDepartment of Physicsen_US
dc.citation.spage777en_US
dc.citation.epage778en_US
dc.citation.volumeNumber43en_US
dc.citation.issueNumber2en_US
dc.publisherInstitute of Physics Publishingen_US


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