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      Time-resolved XPS analysis of the SiO2/Si system in the millisecond range

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      Author(s)
      Demirok, U. K.
      Ertas, G.
      Süzer, Şefik
      Date
      2004
      Source Title
      Journal of Physical Chemistry B
      Print ISSN
      1520-6106
      Volume
      108
      Issue
      17
      Pages
      5179 - 5181
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      By applying voltage pulses to the sample rod while recording the spectrum, we show, for the first time, that it is possible to obtain a time-resolved XPS spectrum in the millisecond range. The Si 2p spectrum of a silicon sample containing a ca. 400-nm oxide layer displays a time-dependent charging shift of ca. 1.7 eV with respect to the Au 4f peaks of a gold metal strip in contact with the sample. When gold is deposited as C12-thiol-capped nanoclusters onto the same sample, this time the Au 4f peaks also display time-dependent charging behavior that is slightly different from that of the Si 2p peak. This charging/discharging is related to emptying/filling of the hole traps in the oxide layer by the stray electrons within the vacuum system guided by the external voltage pulses applied to the sample rod, which can be used to extract important parameter(s) related to the dielectric properties of surface structures.
      Keywords
      Dielectric properties
      Digital to analog conversion
      Electric potential
      Infrared spectroscopy
      MOS devices
      Nuclear magnetic resonance spectroscopy
      Raman spectroscopy
      Vacuum
      X ray photoelectron spectroscopy
      Millisecond range
      Nanoclusters
      Vacuum systems
      Voltage pulses
      Silica
      Permalink
      http://hdl.handle.net/11693/24293
      Published Version (Please cite this version)
      http://pubs.acs.org/doi/abs/10.1021/jp049526m
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