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      High-speed 1.55 μm operation of low-temperature-grown GaAs-based resonant-cavity-enhanced p-i-n photodiodes

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      Author(s)
      Butun, B.
      Bıyıklı, Necmi
      Kimukin, I.
      Aytur, O.
      Özbay, Ekmel
      Postigo, P. A.
      Silveira, J. P.
      Alija, A. R.
      Date
      2004
      Source Title
      Applied Physics Letters
      Print ISSN
      0003-6951
      Publisher
      American Institute of Physics
      Volume
      84
      Issue
      21
      Pages
      4185 - 4187
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      The 1.55 μm high-speed operation of GaAs-based p-i-n photodiodes was demonstrated and their design, growth and fabrication were discussed. A resonant-cavity-detector structure was used to selectively enhance the photoresponse at 1.55 μm. The bottom mirror of the resonant cavity was formed by a highly reflecting 15-pair GaAs/AlAs Bragg mirror and molecular-beam epitaxy was used for wafer growth. It was found that the fabricated devices exhibited a resonance of around 1548 nm and an enhancement factor of 7.5 was achieved when compared to the efficiency of a single-pass detector.
      Keywords
      Bandwidth
      Cavity resonators
      Light absorption
      Mirrors
      Molecular beam epitaxy
      Optical fibers
      Photocurrents
      Photodetectors
      Reflection high energy electron diffraction
      Resonance
      Semiconducting aluminum compounds
      Semiconducting gallium arsenide
      Detector cavities
      Optical designs
      Pulse-response measurements
      Resonant-cavity-detector structures
      Photodiodes
      Permalink
      http://hdl.handle.net/11693/24284
      Published Version (Please cite this version)
      http://dx.doi.org/10.1063/1.1756208
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      • Department of Physics 2550
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