High-speed 1.55 μm operation of low-temperature-grown GaAs-based resonant-cavity-enhanced p-i-n photodiodes
Author(s)
Date
2004Source Title
Applied Physics Letters
Print ISSN
0003-6951
Publisher
American Institute of Physics
Volume
84
Issue
21
Pages
4185 - 4187
Language
English
Type
ArticleItem Usage Stats
228
views
views
222
downloads
downloads
Abstract
The 1.55 μm high-speed operation of GaAs-based p-i-n photodiodes was demonstrated and their design, growth and fabrication were discussed. A resonant-cavity-detector structure was used to selectively enhance the photoresponse at 1.55 μm. The bottom mirror of the resonant cavity was formed by a highly reflecting 15-pair GaAs/AlAs Bragg mirror and molecular-beam epitaxy was used for wafer growth. It was found that the fabricated devices exhibited a resonance of around 1548 nm and an enhancement factor of 7.5 was achieved when compared to the efficiency of a single-pass detector.
Keywords
BandwidthCavity resonators
Light absorption
Mirrors
Molecular beam epitaxy
Optical fibers
Photocurrents
Photodetectors
Reflection high energy electron diffraction
Resonance
Semiconducting aluminum compounds
Semiconducting gallium arsenide
Detector cavities
Optical designs
Pulse-response measurements
Resonant-cavity-detector structures
Photodiodes