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dc.contributor.authorSenger, R. T.en_US
dc.contributor.authorBajaj, K. K.en_US
dc.date.accessioned2016-02-08T10:26:41Z
dc.date.available2016-02-08T10:26:41Z
dc.date.issued2004en_US
dc.identifier.issn0370-1972
dc.identifier.urihttp://hdl.handle.net/11693/24271
dc.description.abstractWe present a brief description of the calculation of the variation of the binding energy of the heavy-hole exciton as a function of well width in quantum well structures composed of II-VI compound semiconductors including the effects of exciton-optical phonon interaction as formulated by Pollmann and Büttner [J. Pollmann and H. Büttner, Phys. Rev. B 16, 4480 (1977)], and of particle masses and dielectric mismatches between the well and the barrier layers. We compare the results of our calculations with the available experimental data in ZnSe/MgS, ZnSe/Mg0.15Zn0.85Se, and ZnS/Mg0.19Z0.81S quantum well structures and find a good agreementen_US
dc.language.isoEnglishen_US
dc.source.titlePhysica Status Solidi (B) Basic Researchen_US
dc.relation.isversionofhttp://dx.doi.org/10.1002/pssb.200402034en_US
dc.titleBinding energies of excitons in II-VI compound-semiconductor based quantum well structuresen_US
dc.typeArticleen_US
dc.departmentDepartment of Physicsen_US
dc.citation.spage1896en_US
dc.citation.epage1900en_US
dc.citation.volumeNumber241en_US
dc.citation.issueNumber8en_US
dc.identifier.doi10.1002/pssb.200402034en_US
dc.publisherWiley - V C H Verlag GmbH & Co.en_US
dc.identifier.eissn1521-3951


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