Binding energies of excitons in II-VI compound-semiconductor based quantum well structures
Senger, R. T.
Bajaj, K. K.
Physica Status Solidi (B) Basic Research
Wiley - V C H Verlag GmbH & Co.
1896 - 1900
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We present a brief description of the calculation of the variation of the binding energy of the heavy-hole exciton as a function of well width in quantum well structures composed of II-VI compound semiconductors including the effects of exciton-optical phonon interaction as formulated by Pollmann and Büttner [J. Pollmann and H. Büttner, Phys. Rev. B 16, 4480 (1977)], and of particle masses and dielectric mismatches between the well and the barrier layers. We compare the results of our calculations with the available experimental data in ZnSe/MgS, ZnSe/Mg0.15Zn0.85Se, and ZnS/Mg0.19Z0.81S quantum well structures and find a good agreement