Solar-blind A1GaN-based p-i-n photodiodes with low dark current and high detectivity
IEEE Photonics Technology Letters
1718 - 1720
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We report solar-blind AlxGal1-xN-based heterojunction p-i-n photodiodes with low dark current and high detectivity. After the p+ GaN cap layer was recess etched, measured dark current was below 3 fA for reverse bias values up to 6 V. The device responsivity increased with reverse bias and reached 0.11 A/W at 261 nm under 10-V reverse bias. The detectors exhibited a cutoff around 283 nm, and a visible rejection of four orders of magnitude at zero bias. Low dark current values led to a high differential resistance of 9.52 × 1015 Ω. The thermally limited detectivity of the devices was calculated as 4.9 × 1014 cm · Hz1/2W-1. © 2004 IEEE.
KeywordsAluminum gallium nitride
Current voltage characteristics
Electric current measurement
Metallorganic chemical vapor deposition
Plasma enhanced chemical vapor deposition
Reactive ion etching
Semiconducting aluminum compounds
Published Version (Please cite this version)http://dx.doi.org/10.1109/LPT.2004.829526
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