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dc.contributor.authorErtas, G.en_US
dc.contributor.authorSuzer, S.en_US
dc.date.accessioned2016-02-08T10:26:31Z
dc.date.available2016-02-08T10:26:31Z
dc.date.issued2004en_US
dc.identifier.issn0142-2421
dc.identifier.urihttp://hdl.handle.net/11693/24261
dc.description.abstractThe XPS spectra of thermally grown oxide layers on Si, Al, W and Hf substrates have been recorded while the samples were subjected to external d.c. voltage bias. The bias induces additional shifts in the measured binding energy differences between the XPS peaks of the oxide and that of the metal substrate in Si and Al (as probed both in the 2p and the KLL Auger regions), but not in W and Hf (as probed in the 4f region). These bias induced shifts are attributed to differential charging between the oxide layer and the substrate, which in turn is postulated to be related to the capacitance and inversely to the dielectric constant of the oxide layer. Accordingly, silicon dioxide with the smallest dielectric constant undergoes the largest differential charging, aluminium oxide is in the middle and no appreciable charging can be induced in the high-k tungsten and hafnium oxides, all of which are ∼6 nm thick. Copyright © 2004 John Wiley & Sons, Ltd.en_US
dc.language.isoEnglishen_US
dc.source.titleSurface and Interface Analysisen_US
dc.relation.isversionofhttp://dx.doi.org/10.1002/sia.1839en_US
dc.subjectDielectric constanten_US
dc.subjectDifferential chargingen_US
dc.subjectExternal biasingen_US
dc.subjectMetal oxidesen_US
dc.subjectAluminaen_US
dc.subjectBinding energyen_US
dc.titleXPS analysis with external bias: a simple method for probing differential chargingen_US
dc.typeArticleen_US
dc.departmentDepartment of Chemistryen_US
dc.citation.spage619en_US
dc.citation.epage623en_US
dc.citation.volumeNumber36en_US
dc.citation.issueNumber7en_US
dc.identifier.doi10.1002/sia.1839en_US
dc.publisherJohn Wiley & Sons Ltd.en_US


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