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      High-Speed InSb photodetectors on GaAs for mid-IR applications

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      Author(s)
      Kimukin, I.
      Bıyıklı, Necmi
      Kartaloǧlu, T.
      Aytür, O.
      Özbay, Ekmel
      Date
      2004
      Source Title
      IEEE Journal on Selected Topics in Quantum Electronics
      Print ISSN
      1077-260X
      Publisher
      IEEE
      Volume
      10
      Issue
      4
      Pages
      766 - 770
      Language
      English
      Type
      Article
      Item Usage Stats
      251
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      558
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      Abstract
      We report p-i-n type InSb-based high-speed photodetectors grown on GaAs substrate. Electrical and optical properties of photodetectors with active areas ranging from 7.06 × 10 -6 cm 2 to 2.25 × 10 -4 cm 2 measured at 77 K and room temperature. Detectors had high zero-bias differential resistances, and the differential resistance area product was 4.5 Ω cm 2. At 77 K, spectral measurements yielded high responsivity between 3 and 5 μm with the cutoff wavelength of 5.33 μm. The maximum responsivity tor 80-μm diameter detectors was 1.00 × 10 5 V/W at 435 μm while the detectivity was 3.41×10 9 cm Hz 1/2/W. High-speed measurements were done at room temperature. An optical parametric oscillator was used to generate picosecond full-width at half-maximum pulses at 2.5 μm with the pump at 780 mm. 30-μm diameter photodetectors yielded 3-dB bandwidth of 8.5 GHz at 2.5 V bias.
      Keywords
      High-speed
      Infrared
      Photodetector
      Arsenic
      Bandwidth
      Chemical vapor deposition
      Electric resistance
      Epitaxial growth
      Fourier transforms
      Infrared radiation
      Optical properties
      Semiconducting gallium arsenide
      Voltage measurement
      High-speed
      Midinfrared (mid-IR)
      Wavelength
      Photodetectors
      Permalink
      http://hdl.handle.net/11693/24257
      Published Version (Please cite this version)
      http://dx.doi.org/10.1109/JSTQE.2004.833891
      Collections
      • Department of Electrical and Electronics Engineering 4012
      • Department of Physics 2551
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