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dc.contributor.authorGurlu, O.en_US
dc.contributor.authorZandvliet, H. J. W.en_US
dc.contributor.authorPoelsema, B.en_US
dc.contributor.authorDag, S.en_US
dc.contributor.authorÇıracı, Salimen_US
dc.date.accessioned2016-02-08T10:26:23Z
dc.date.available2016-02-08T10:26:23Z
dc.date.issued2004en_US
dc.identifier.issn0163-1829
dc.identifier.urihttp://hdl.handle.net/11693/24251
dc.description.abstractWe have studied the initial stages of submonolayer Pt growth on the Ge(001). We have observed several stable and meta-stable adsorption configurations of Pt atoms at various temperatures. Calculations indicate relatively high binding energies of Pt atoms onto the Ge lattice, at different adsorption sites. Our results show that through-the-substrate bonding (concerted bonding) of two Pt atoms is more favored on Ge(001) surface then a direct Pt-Pt bond. Both our experiments and calculations indicate the breaking of Ge-Ge bonds on the surface in the vicinity of Pt adsorbates. We have also observed the spontaneous generation of 2 + 1 dimer vacancy defects at room temperature that cause the ejection of Ge atoms onto the surface. Finally we have studied the diffusion of Pt atoms into the bulk as a result of annealing and found out that they get trapped at subsurface sites.en_US
dc.language.isoEnglishen_US
dc.source.titlePhysical Review B - Condensed Matter and Materials Physicsen_US
dc.relation.isversionofhttp://dx.doi.org/10.1103/PhysRevB.70.085312en_US
dc.subjectPlatinumen_US
dc.subjectAdsorptionen_US
dc.subjectArticleen_US
dc.subjectCalculationen_US
dc.subjectDensity functional theoryen_US
dc.subjectDiffusionen_US
dc.subjectGeometryen_US
dc.subjectHigh temperatureen_US
dc.subjectParticle sizeen_US
dc.subjectRadiation detectionen_US
dc.subjectRoom temperatureen_US
dc.subjectScanning tunneling microscopyen_US
dc.subjectSemiconductoren_US
dc.titleInitial stages of Pt growth on Ge (001) studied by scanning tunneling microscopy and density functional theoryen_US
dc.typeArticleen_US
dc.departmentDepartment of Physicsen_US
dc.citation.spage085312-1en_US
dc.citation.epage085312-10en_US
dc.citation.volumeNumber70en_US
dc.citation.issueNumber8en_US
dc.identifier.doi10.1103/PhysRevB.70.085312en_US
dc.publisherAmerican Physical Societyen_US
dc.contributor.bilkentauthorÇıracı, Salim


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