Theoretical assessment of electronic transport in InN
Author
Bulutay, C.
Ridley, B. K.
Date
2004Source Title
Superlattices and Microstructures
Print ISSN
0749-6036
Electronic ISSN
1096-3677
Publisher
Elsevier
Volume
36
Issue
4-6
Pages
465 - 471
Language
English
Type
ArticleItem Usage Stats
130
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Abstract
Among the group-III nitrides, InN displays markedly unusual electronic transport characteristics due to its smaller effective mass, high peak velocity and high background electron concentration. First, a non-local empirical pseudopotential band structure of InN is obtained in the light of recent experimental and first-principles results. This is utilized within an ensemble Monte Carlo framework to illuminate the interesting transport properties. It is observed that InN has a peak velocity which is about 75% higher than that of GaN while at higher fields its saturation velocity is lower than that of GaN. Because of the strongly degenerate regime brought about by the high background electron concentration, the electron-electron interaction is also investigated, but its effect on the steady-state and transient velocity-field characteristics is shown to be negligible. Finally, hot phonon generation due to excessive polar optical phonon production in the electron scattering and relaxation processes is accounted for. The main findings are the appreciable reduction in the saturation drift velocity and the slower recovery from the velocity overshoot regime. The time evolution of the hot phonon distribution is analysed in detail and it is observed to be extremely anisotropic, predominantly along the electric force direction.
Keywords
Band structureCarrier concentration
Electron scattering
Electron transport properties
Monte Carlo methods
Optoelectronic devices
Phonons
Relaxation processes
Drift velocity
Electron-electron interaction
InN
Optical phonons
Indium compounds
Permalink
http://hdl.handle.net/11693/24215Published Version (Please cite this version)
http://dx.doi.org/10.1016/j.spmi.2004.09.051Collections
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