Energy relaxation of electrons in InGaN quantum wells
Metallurgical and Materials Transactions A - Physical Metallurgy and Materials Science
Springer New York LLC
1565 - 1569
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In this study, electron energy relaxation mechanisms in HEMT structures with different InxGa1−xN-channel quantum well (QW) widths are investigated. Theoretical value of the inelastic scattering rates is carried out at electron temperatures between 30 K (−243 °C) < Te < 700 K (427 °C). We used both the experimentally determined and calculated electron temperatures to estimate the energy relaxation rates of non-equilibrium electrons. In wide InGaN QWs, power loss of an electron is shown to be significantly smaller than that in the narrower QWs. © 2015, The Minerals, Metals & Materials Society and ASM International.
KeywordsElectron energy levels
High electron mobility transistors
Semiconducting indium compounds
Semiconductor quantum wells
Inelastic scattering rate
InGaN quantum wells
Published Version (Please cite this version)http://dx.doi.org/10.1007/s11661-015-2762-2
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