Fabrication and characterisation of solar-blind Al0.6Ga0.4N MSM photodetectors
The Institution of Engineering and Technology
274 - 275
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Solar-blind metal-semiconductor-metal (MSM) photodiodes based on MOCVD-grown Al0.6Ga0.4N template have been fabricated and tested. AlGaN detector samples were fabricated using a microwave compatible fabrication process. Optical transmission, current-voltage, spectral responsivity, and temporal pulse response measurements were carried out. The fabricated devices had very low leakage current and displayed true solar-blind response with ∼255 nm cutoff wavelength.