Fabrication and characterisation of solar-blind Al0.6Ga0.4N MSM photodetectors

Date
2005
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Source Title
Electronics Letters
Print ISSN
0013-5194
Electronic ISSN
1350-911X
Publisher
The Institution of Engineering and Technology
Volume
41
Issue
5
Pages
274 - 275
Language
English
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Abstract

Solar-blind metal-semiconductor-metal (MSM) photodiodes based on MOCVD-grown Al0.6Ga0.4N template have been fabricated and tested. AlGaN detector samples were fabricated using a microwave compatible fabrication process. Optical transmission, current-voltage, spectral responsivity, and temporal pulse response measurements were carried out. The fabricated devices had very low leakage current and displayed true solar-blind response with ∼255 nm cutoff wavelength.

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Published Version (Please cite this version)