Fabrication and characterisation of solar-blind Al0.6Ga0.4N MSM photodetectors
0013-5194 (print)1350-911X (online)
The Institution of Engineering and Technology
274 - 275
MetadataShow full item record
Please cite this item using this persistent URLhttp://hdl.handle.net/11693/24090
Solar-blind metal-semiconductor-metal (MSM) photodiodes based on MOCVD-grown Al0.6Ga0.4N template have been fabricated and tested. AlGaN detector samples were fabricated using a microwave compatible fabrication process. Optical transmission, current-voltage, spectral responsivity, and temporal pulse response measurements were carried out. The fabricated devices had very low leakage current and displayed true solar-blind response with ∼255 nm cutoff wavelength.