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dc.contributor.authorBozbey, A.en_US
dc.contributor.authorFardmanesh, M.en_US
dc.contributor.authorSchubert, J.en_US
dc.contributor.authorBanzet, M.en_US
dc.date.accessioned2016-02-08T10:19:59Z
dc.date.available2016-02-08T10:19:59Z
dc.date.issued2006en_US
dc.identifier.issn1051-8223
dc.identifier.urihttp://hdl.handle.net/11693/23837
dc.description.abstractThe effect of the superconductivity transition on the thermal crosstalk in YBa 2Cu 3O 7-x, edge-transition bolometer arrays is investigated for DC to midrange modulation frequency infrared radiation. The bolometers in the arrays were designed with various distances on SrTiO 3 (100) substrates. We have observed a change in the thermal crosstalk between neighbor devices through the superconductivity transition temperature range. Superconductivity transition dependence of the thermal coupling between the devices was measured by utilizing the thermal conductance measurement methods developed for the bulk material. The knee points in the magnitude of the response versus modulation frequency curves of the devices were also determined by illuminating one of the bolometers in the arrays and measuring the response of the neighbor devices. By using the knee frequency and the distance between the bolometers, the modulation frequency criterion for crosstalk-free response at the transition region in various array structures is found and the results of the thermal coupling measurements are further studied and presented here.en_US
dc.language.isoEnglishen_US
dc.source.titleIEEE Transactions on Applied Superconductivityen_US
dc.relation.isversionofhttps://doi.org/10.1109/TASC.2005.861040en_US
dc.subjectBolometer arrayen_US
dc.subjectInfrared detectoren_US
dc.subjectSuperconductivityen_US
dc.subjectThermal conductivityen_US
dc.subjectThermal crosstalken_US
dc.titleSuperconductivity transition dependence of the thermal crosstalk in YBa 2Cu 3O 7-x edge-transition bolometer arraysen_US
dc.typeArticleen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.citation.spage9en_US
dc.citation.epage14en_US
dc.citation.volumeNumber16en_US
dc.citation.issueNumber1en_US
dc.identifier.doi10.1109/TASC.2005.861040en_US
dc.publisherInstitute of Electrical and Electronics Engineersen_US
dc.identifier.eissn1558-2515


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