Show simple item record

dc.contributor.authorAǧan, S.en_US
dc.contributor.authorÇelik-Aktaş, A.en_US
dc.contributor.authorZuo, J. M.en_US
dc.contributor.authorDana, A.en_US
dc.contributor.authorAydınlı, Atillaen_US
dc.date.accessioned2016-02-08T10:19:50Z
dc.date.available2016-02-08T10:19:50Z
dc.date.issued2006en_US
dc.identifier.issn0947-8396
dc.identifier.urihttp://hdl.handle.net/11693/23827
dc.description.abstractGermanosilicate layers were grown on Si substrates by plasma enhanced chemical vapor deposition (PECVD) and annealed at different temperatures ranging from 700-1010 °C for durations of 5 to 60 min. Transmission electron microscopy (TEM) was used to investigate Ge nanocrystal formation in SiO 2:Ge films. High-resolution cross section TEM images, electron energy-loss spectroscopy and energy dispersive X-ray analysis (EDX) data indicate that Ge nanocrystals are present in the amorphous silicon dioxide films. These nanocrystals are formed in two spatially separated layers with average sizes of 15 and 50 nm, respectively. EDX analysis indicates that Ge also diffuses into the Si substrate.en_US
dc.language.isoEnglishen_US
dc.source.titleApplied Physics A: Materials Science and Processingen_US
dc.relation.isversionofhttp://dx.doi.org/10.1007/s00339-005-3464-1en_US
dc.subjectAmorphous materialsen_US
dc.subjectElectron energy loss spectroscopyen_US
dc.subjectEnergy dispersive spectroscopyen_US
dc.subjectGermaniumen_US
dc.subjectPlasma enhanced chemical vapor depositionen_US
dc.subjectSilicaen_US
dc.subjectSynthesis (chemical)en_US
dc.subjectTransmission electron microscopyen_US
dc.subjectX ray analysisen_US
dc.subjectGermanosilicate layersen_US
dc.subjectSilicon dioxide layersen_US
dc.subjectSilicon substratesen_US
dc.subjectNanostructured materialsen_US
dc.titleSynthesis and size differentiation of Ge nanocrystals in amorphous SiO 2en_US
dc.typeArticleen_US
dc.departmentDepartment of Physicsen_US
dc.citation.spage107en_US
dc.citation.epage110en_US
dc.citation.volumeNumber83en_US
dc.citation.issueNumber1en_US
dc.identifier.doi10.1007/s00339-005-3464-1en_US
dc.publisherSpringeren_US
dc.contributor.bilkentauthorAydınlı, Atilla


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record