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dc.contributor.authorAlptekin, E.en_US
dc.contributor.authorAktas, O.en_US
dc.date.accessioned2016-02-08T10:19:27Z
dc.date.available2016-02-08T10:19:27Z
dc.date.issued2006en_US
dc.identifier.issn0038-1101
dc.identifier.urihttp://hdl.handle.net/11693/23805
dc.description.abstractGaN and AlGaN static induction transistors (SITs) are simulated using a two-dimensional self-consistent drift-diffusion simulator incorporating impact-ionization and self-heating effects. The results indicate that GaN SIT devices can have performance comparable to SiC SITs. As compared to GaN SITs, AlGaN SITs will have higher breakdown voltage but smaller maximum current. The power per unit gate width obtainable from GaN and AlGaN SITs are approximately the same, but the maximum power handling capacity of the AlGaN SIT is significantly higher due to bigger optimum load resistance. A comparison of the characteristics of GaN and AlGaN SITs with AlGaN/GaN HEMTs shows that the SIT devices have much lower cut-off frequency and smaller transconductance but can produce higher total output power. © 2006 Elsevier Ltd. All rights reserved.en_US
dc.language.isoEnglishen_US
dc.source.titleSolid-State Electronicsen_US
dc.relation.isversionofhttps://doi.org/10.1016/j.sse.2006.03.009en_US
dc.subjectGaNen_US
dc.subjectHigh power transistorsen_US
dc.subjectStatic induction transistoren_US
dc.titleSimulation of GaN and AlGaN static induction transistorsen_US
dc.typeArticleen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.citation.spage741en_US
dc.citation.epage749en_US
dc.citation.volumeNumber50en_US
dc.citation.issueNumber5en_US
dc.identifier.doi10.1016/j.sse.2006.03.009en_US
dc.publisherElsevier Science & Technologyen_US
dc.identifier.eissn1879-2405


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