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dc.contributor.authorYu H.en_US
dc.contributor.authorCaliskan, D.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2016-02-08T10:18:22Z
dc.date.available2016-02-08T10:18:22Z
dc.date.issued2006en_US
dc.identifier.issn218979
dc.identifier.urihttp://hdl.handle.net/11693/23735
dc.description.abstractSemi-insulating character (sheet resistivity of 3.26 × 10 11 Ω/sq) of thick GaN layers was developed for AlGaN/GaN high electron mobility transistor (HEMT) applications on an AlN buffer layer. Electrical and structural properties were characterized by a dark current-voltage transmission line model, x-ray diffraction, and atomic force microscope measurements. The experimental results showed that compared to semi-insulating GaN grown on low temperature GaN nucleation, the crystal quality as well as surface morphology were remarkably improved. It was ascribed to the utilization of a high quality insulating AlN buffer layer and the GaN initial coalescence growth mode. Moreover, the significant increase of electron mobility in a HEMT structure suggests that this is a very promising method to obtain high performance AlGaN/GaN HEMT structures on sapphire substrates. © 2006 American Institute of Physics.en_US
dc.language.isoEnglishen_US
dc.source.titleJournal of Applied Physicsen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.2221520en_US
dc.subjectAtomic force microscopyen_US
dc.subjectCrystallographyen_US
dc.subjectElectric propertiesen_US
dc.subjectElectron mobilityen_US
dc.subjectHigh electron mobility transistorsen_US
dc.subjectMorphologyen_US
dc.subjectNucleationen_US
dc.subjectSapphireen_US
dc.subjectSurfacesen_US
dc.subjectX ray diffractionen_US
dc.subjectCrystal qualityen_US
dc.subjectCurrent voltage transmission linesen_US
dc.subjectSapphire substratesen_US
dc.subjectStructural propertiesen_US
dc.subjectSemiconducting gallium compoundsen_US
dc.titleGrowth of high crystalline quality semi-insulating GaN layers for high electron mobility transistor applicationsen_US
dc.typeArticleen_US
dc.departmentUNAM - Institute of Materials Science and Nanotechnology
dc.departmentDepartment of Physics
dc.departmentDepartment of Electrical and Electronics Engineering
dc.citation.volumeNumber100en_US
dc.citation.issueNumber3en_US
dc.identifier.doi10.1063/1.2221520en_US
dc.contributor.bilkentauthorÖzbay, Ekmelen_US


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