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dc.contributor.authorBütün, S.en_US
dc.contributor.authorGökkavas, M.en_US
dc.contributor.authorYu, H.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2016-02-08T10:18:21Z
dc.date.available2016-02-08T10:18:21Z
dc.date.issued2006en_US
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/11693/23734
dc.description.abstractMetal-semiconductor-metal photodetectors on semi-insulating GaN templates were demonstrated and compared with photodetectors fabricated on regular GaN templates. Samples were grown on a metal organic chemical vapor deposition system. Devices on semi-insulating template exhibited a dark current density of 1.96 × 10-10 A/cm2 at 50 V bias, which is four orders of magnitude lower compared with devices on regular template. Device responsivities were 101.80 and 88.63 A/W at 50 V bias for 360 nm ultraviolet illumination for semi-insulating and regular templates, respectively. Incident power as low as 3 pW was detectable using the devices that were fabricated on the semi-insulating template. © 2006 American Institute of Physics.en_US
dc.language.isoEnglishen_US
dc.source.titleApplied Physics Lettersen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.2234741en_US
dc.subjectChemical vapor depositionen_US
dc.subjectCurrent densityen_US
dc.subjectElectric currentsen_US
dc.subjectGallium nitrideen_US
dc.subjectPhotodetectorsen_US
dc.subjectSemiconductor materialsen_US
dc.subjectSemiconductor metal boundariesen_US
dc.subjectUltraviolet radiationen_US
dc.subjectDark currentsen_US
dc.subjectMetal-semiconductor-metal photodetectorsen_US
dc.subjectRegular templateen_US
dc.subjectSemi insulating GaNen_US
dc.subjectPhotodiodesen_US
dc.titleLow dark current metal-semiconductor-metal photodiodes based on semi-insulating GaNen_US
dc.typeArticleen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.citation.spage073503-1en_US
dc.citation.epage073503-3en_US
dc.citation.volumeNumber89en_US
dc.citation.issueNumber7en_US
dc.identifier.doi10.1063/1.2234741en_US
dc.publisherAIP Publishing LLCen_US
dc.contributor.bilkentauthorÖzbay, Ekmel
dc.identifier.eissn1077-3118


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