Low dark current metal-semiconductor-metal photodiodes based on semi-insulating GaN
Applied Physics Letters
AIP Publishing LLC
073503-1 - 073503-3
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Metal-semiconductor-metal photodetectors on semi-insulating GaN templates were demonstrated and compared with photodetectors fabricated on regular GaN templates. Samples were grown on a metal organic chemical vapor deposition system. Devices on semi-insulating template exhibited a dark current density of 1.96 × 10-10 A/cm2 at 50 V bias, which is four orders of magnitude lower compared with devices on regular template. Device responsivities were 101.80 and 88.63 A/W at 50 V bias for 360 nm ultraviolet illumination for semi-insulating and regular templates, respectively. Incident power as low as 3 pW was detectable using the devices that were fabricated on the semi-insulating template. © 2006 American Institute of Physics.
KeywordsChemical vapor deposition
Semiconductor metal boundaries
Semi insulating GaN
Published Version (Please cite this version)http://dx.doi.org/10.1063/1.2234741
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